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| 7MBR75U2B060 IGBT MODULE (U series) 600V / 75A / PIM IGBT Modules Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Symbol Condition Rating 600 20 75 150 75 150 255 600 20 30 60 133 600 800 75 525 1378 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 VCES VGES IC Collector current ICP -IC -IC pulse Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Repetitive peak reverse voltage VRRM Average output current IO Surge current (Non-Repetitive) IFSM I2t (Non-Repetitive) I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Inverter Converter Brake Continuous 1ms 1ms 1 device Unit V V A Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute W V V A A W V V A A A 2s C C V V N*m *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM VFM IRRM R B Symbol Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=75mA Tj=25C VGE=15V Tj=125C Ic=75A Tj=25C Tj=125C VGE=0V, VCE=10V, f=1MHz VCC=300V IC=75A VGE=15V RG=47 VGE=0V IF=75A Tj=25C Tj=125C Tj=25C Tj=125C Min. 6.2 465 3305 7MBR75U2B060 Characteristics Typ. Max. 1.0 200 6.7 7.7 2.20 2.50 2.40 1.85 2.15 5.4 0.42 1.20 0.24 0.60 0.05 0.42 1.20 0.03 0.45 1.95 2.30 2.00 1.60 1.65 0.35 1.0 200 2.00 2.30 2.30 1.85 2.15 0.42 1.20 0.24 0.60 0.42 1.20 0.03 0.45 1.0 1.20 1.50 1.10 1.0 5000 495 520 3375 3450 Characteristics Typ. Max. 0.05 0.49 0.79 0.94 0.66 Unit mA nA V V Inverter Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=75A VCE=600V, VGE=0V VCE=0V, VGE=20V Tj=25C IC=30A Tj=125C VGE=15V Tj=25C Tj=125C VCC=300V IC=30A VGE=15V RG=120 VR=600V IF=75A VGE=0V VR=800V T=25C T=100C T=25/50C Condition s mA nA V Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value s Converter terminal chip mA V mA K Unit Item Thermistor Thermal resistance Characteristics Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound - Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 9 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 175 VGE=20V 15V 12V 150 125 100 10V 75 50 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] 0 0 1 2 Collector current : Ic [ A ] Colector current : Ic [ A ] 150 125 100 75 50 7MBR75U2B060 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 175 VGE=20V 15V 12V 10V 8V 25 3 4 5 Collector-Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 175 Tj=25C 150 Collector current : Ic [ A ] 125 100 75 50 25 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] Tj=125C Collector-Emitter voltage : VCE [ V ] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 8 6 4 Ic=150A Ic=75A Ic=37.5A 2 0 5 10 15 20 25 Gate-Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10.00 Capacitance : Cies, Coes, Cres [ nF ] Cies 1.00 Coes Cres Collector-Emitter voltage : VCE [ V ] 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=75A, Tj= 25C 25 400 20 300 VGE 200 15 10 0.10 100 VCE 5 0.01 0 10 20 30 Collector-Emitter voltage : VCE [ V ] 0 0 50 100 150 200 250 300 Gate charge : Qg [ nC ] 0 Gate-Emitter voltage : VGE [ V ] IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=47,, Tj= 25C 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff 1000 toff 7MBR75U2B060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=47, Tj=125C ton tr 100 ton tr 100 tf tf 10 10 0 40 80 120 Collector current : Ic [ A ] 0 40 80 120 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=15V, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] 8 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=47 Eon(125C) Eon(25C) 6 4 Eoff(125C) Eoff(25C) 2 Err(125C) 0 Err(25 0 30 60 90 120 150 100 tf 10 10 100 Gate resistance : Rg [ ] 1000 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=15V, Tj= 125C 25 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon Collector current : Ic [ A ] 150 200 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 47 ,Tj <= 125C 20 15 100 10 Eoff 5 Err 0 10 100 Gate resistance : Rg [ ] 1000 50 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR75U2B060 [ Inverter ] Forward current vs. Forward on voltage (typ.) chip 175 150 Forward current : IF [ A ] 125 100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Forward on voltage : VF [ V ] 1 0 30 Tj=25C Tj=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [nsec] 1000 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=47 trr (125C) 100 trr (25C) Irr (125C) Irr (25C) 10 60 90 120 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip 175 150 Forward current : IF [ A ] 125 100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 Forward on voltage : VFM [ V ] Tj=125C Tj=25C [ Thermistor ] Transient thermal resistance (max.) 10.00 Thermal resistanse : Rth(j-c) [ C/W ] 100 Temperature characteristic (typ.) 1.00 IGBT[Brake] FWD[Inverter] IGBT[Inverter] Resistance : R [ k ] 10 0.10 1 Conv.Diode 0.01 0.001 0.1 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 10 12 14 16 18 00000 Temperature [C ] Pulse width : Pw [ sec ] IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 80 7MBR75U2B060 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 80 Collector current : Ic [ A ] 40 10V Collector current : Ic [ A ] 60 VGE=20V 15V 12V 60 VGE=20V 15V 12V 40 10V 20 8V 20 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 8V 5 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 80 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 Collector current : Ic [ A ] 60 Tj=25C 40 Tj=125C 8 6 4 Ic=60A Ic=30A Ic=15A 20 2 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10.00 Collector-Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ nF ] Cies 1.00 Coes Cres 0.10 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=30A, Tj= 25C 25 Gate - Emitter voltage : VGE [ V ] 400 20 300 VGE 200 15 10 100 VCE 5 0.01 0 10 20 30 Collector-Emitter voltage : VCE [ V ] 0 0 40 80 120 160 0 Gate charge : Qg [ nC ] IGBT Module Outline Drawings, mm 7MBR75U2B060 |
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